Morphology and flexibility of graphene and few-layer graphene on various substrates

Details Morphology and flexibility of graphene and few-layer graphene on various substrates Morphology and flexibility of graphene and few-layer graphene on various substrates

2008-06-25

arxiv.org/abs/0806.4074v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2968310

We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs and InGaAs substrates. The morphology of graphene on these substrates was investigated by scanning electron and atomic force microscopy and compared to layers on silicon oxide. It was found that graphene sheets strongly follow the texture of the sustaining substrates independent on doping, polarity or roughness. Furthermore resist residues exist on top of graphene after a lithographic step. The obtained results provide the opportunity to research the graphene-substrate interactions.

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