Monte Carlo simulation of spin relaxation in nanowires and 2-D channels of II-VI semiconductors

Details Monte Carlo simulation of spin relaxation in nanowires and 2-D channels of II-VI semiconductors Monte Carlo simulation of spin relaxation in nanowires and 2-D channels of II-VI semiconductors

2011-11-11

arxiv.org/abs/1111.2814v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

14 pages, 32 figures

Scientific paper

We have analysed spin relaxation behaviour of various II-VI semiconductors for nanowire structure and 2-D channel by simulating spin polarized transport through a semi-classical approach. Monte Carlo simulation method has been applied to simulate our model. D'yakanov-Perel mechanism and Elliot-Yafet mechanism are dominant for spin relaxation in II-VI semiconductors. Variation in spin relaxation length with external field has been analysed and comparison is drawn between nanowire and 2-D channels. Spin relaxation lengths of various II-VI semiconductors are compared at an external field of 1kV/cm to understand the predominant factors affecting spin de-phasing in them. Among the many results obtained, most noticeable one is that spin relaxation length in nanowires is many times greater than that in 2-D channel.

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