Monte Carlo Simulation of Spin-Polarized Transport

Details Monte Carlo Simulation of Spin-Polarized Transport Monte Carlo Simulation of Spin-Polarized Transport

2003-02-20

arxiv.org/abs/cond-mat/0302395v1

Lect. Notes Computer Sci. 2668-II, 881-991 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 4 figures

Scientific paper

10.1007/3-540-44843-8_95

Monte Carlo simulations are performed to study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The density matrix description of the spin polarization is incorporated in the simulation algorithm. The spin-orbit interaction terms generate coherent evolution of the electron spin polarization and also cause dephasing. The spatial motion of the electrons is treated semiclassically. Three different scattering mechanisms--optical phonons, acoustic phonons and ionized impurities--are considered. The electric field is calculated self-consistently from the charge distribution. The Monte Carlo scheme is described, and simulation results are reported for temperatures in the range 77-300 K.

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