Monte Carlo simulation of GaAs(001) homoepitaxy

Details Monte Carlo simulation of GaAs(001) homoepitaxy Monte Carlo simulation of GaAs(001) homoepitaxy

2000-04-21

arxiv.org/abs/cond-mat/0004368v1

Prog. Theo. Phys, Suppl. 138, 90 (2000).

Physics

Condensed Matter

Materials Science

6 pages, 7 figures, talk given at 5th International Conference on Computational Physics (Kanazawa, Japan, 1999). Progress of T

Scientific paper

10.1143/PTPS.138.90

By carrying out Monte Carlo simulations based on the two-species atomic-scale
kinetic growth model of GaAs(001) homoepitaxy and comparing the results with
scanning tunneling microscope images, we show that initial growing islands
undergo the structural transformation before adopting the proper beta2(2x4)
reconstruction.

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