Monte Carlo Simulation of Electron Transport in Degenerate Semiconductors

Details Monte Carlo Simulation of Electron Transport in Degenerate Semiconductors Monte Carlo Simulation of Electron Transport in Degenerate Semiconductors

2006-12-29

arxiv.org/abs/cond-mat/0612684v1

Physics

Condensed Matter

Materials Science

Scientific paper

A modified algorithm is proposed to include Pauli exclusion principle in Monte-Carlo simulations. This algorithm has significant advantages to implement in terms of simplicity, speed and memory storage. We show that even in moderately high applied fields, one can estimate electronic distribution with a shifted Fermi sphere without introducing significant errors. Furthermore, the free-flights must be coupled to state availability constraints; this leads to substantial decrease in carrier heating at high fields. We give the correct definition for electronic temperature and show that in high applied fields, the quasi Fermi level is valley dependent. The effect of including Pauli exclusion principle on the band profile; electronic temperature and quasi Fermi level for inhomogeneous case of a single barrier heterostructure is illustrated.

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