Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction

Details Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction

2003-09-04

arxiv.org/abs/cond-mat/0309118v1

Mathematics and Computers in Simulation 65, 351-363 (2004)

Physics

Condensed Matter

18 pages, 7 figures

Scientific paper

10.1016/j.matcom.2004.01.007

A method for Monte Carlo simulation of 2D spin-polarized electron transport in III-V semiconductor heterojunction FETs is presented. In the simulation, the dynamics of the electrons in coordinate and momentum space is treated semiclassically. The density matrix description of the spin is incorporated in the Monte Carlo method to account for the spin polarization dynamics. The spin-orbit interaction in the spin FET leads to both coherent evolution and dephasing of the electron spin polarization. Spin-independent scattering mechanisms, including optical phonons, acoustic phonons and ionized impurities, are implemented in the simulation. The electric field is determined self-consistently from the charge distribution resulting from the electron motion. Description of the Monte Carlo scheme is given and simulation results are reported for temperatures in the range 77-300 K.

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