Monte Carlo Method for a Quantum Measurement Process by a Single-Electron Transistor

Details Monte Carlo Method for a Quantum Measurement Process by a Single-Electron Transistor Monte Carlo Method for a Quantum Measurement Process by a Single-Electron Transistor

2004-06-15

arxiv.org/abs/cond-mat/0406342v1

Phys. Rev. B 70, 075305 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, to appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.70.075305

We derive the quantum trajectory or stochastic (conditional) master equation for a single superconducting Cooper-pair box (SCB) charge qubit measured by a single-electron transistor (SET) detector. This stochastic master equation describes the random evolution of the measured SCB qubit density matrix which both conditions and is conditioned on a particular realization of the measured electron tunneling events through the SET junctions. Hence it can be regarded as a Monte Carlo method that allows us to simulate the continuous quantum measurement process. We show that the master equation for the "partially" reduced density matrix [Y. Makhlin et.al., Phys. Rev. Lett. 85, 4578 (2000)] can be obtained when a "partial" average is taken on the stochastic master equation over the fine grained measurement records of the tunneling events in the SET. Finally, we present some Monte Carlo simulation results for the SCB/SET measurement process. We also analyze the probability distribution P(m,t) of finding m electrons that have tunneled into the drain of the SET in time t to demonstrate the connection between the quantum trajectory approach and the "partially" reduced density matrix approach.

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