Monolithic silicon E-ΔE telescope produced by the quasi-selective epitaxy

Details Monolithic silicon E-ΔE telescope produced by the quasi-selective epitaxy Monolithic silicon E-ΔE telescope produced by the quasi-selective epitaxy

Aug 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004nimpa.528..721k&link_type=abstract

Nuclear Instruments and Methods in Physics Research Section A, Volume 528, Issue 3, p. 721-730.

Physics

2

Quasi-Selective Epitaxy, Monolithic E-Δe Telescope, Heavy Ion Identification

Scientific paper

The monolithic, silicon, E-ΔE telescope with 20μm thick ΔE detector followed by 70μm thick E detector based on the n-p+-n structure was produced using a new developed process named quasi-selective epitaxy. The resistivity profile of the n-p+-n structure and E-ΔE two-dimensional scatter plots obtained after irradiation of the monolithic E-ΔE telescope by α-particles from the reaction 9Be(40Ar,α) and the calibration source are presented. Using the reaction 12C(14N,X) with energy E(14N)=82.6MeV at the laboratory angle ϑ=20° performed at Warsaw Cyclotron the following products: He, Li, Be, B, C, N, O, F, Ne have been identified. An energy resolution of the monolithic E-ΔE telescope measured using α-particles was about 300keV. The sheet resistance of the p+-layer separating both telescope detectors was estimated to about 4000Ω using the numerical solution of the telegraphic equation describing of time-dependent evolution of the cross-talk potentials in the ΔE detector RC network.

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