Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

Details Molecular-beam epitaxy of (Zn,Mn)Se on Si(100) Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

2004-10-21

arxiv.org/abs/cond-mat/0410540v1

Appl. Phys. Lett. 85, 6215 (2004)

Physics

Condensed Matter

Materials Science

To be published in Applied Physics Letters

Scientific paper

10.1063/1.1841456

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

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