Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2004-11-29
Appl. Phys. Lett. 86, 192106 (2005)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
4 pages, 4 figures
Scientific paper
10.1063/1.1923761
We implement metallic layers of Si-doped (110) GaAs as modulation doping in high mobility p-type heterostructures, changing to p-growth conditions for the doping layer alone. The strongly auto-compensated doping is first characterized in bulk samples, identifying the metal-insulator transition density and confirming classic hopping conduction in the insulating regime. To overcome the poor morphology inherent to Si p-type (110) growth, heterostructures are fabricated with only the modulation doping layer grown under p-type conditions. Such heterostructures show a hole mobility of 1.75x10^2 cm^2/Vs at density p=2.4x10^11 cm^-2. We identify the zero field spin-splitting characteristic of p-type heterostructures, but observe a remarkably isotropic mobility and a persistent photoconductivity unusual for p-heterojunctions grown using other doping techniques. This new modulated growth technique is particularly relevant for p-type cleaved-edge overgrowth and for III-V growth chambers where Si is the only dopant.
Abstreiter Gerhard
Bichler Martin
Fischer Felix
Grayson Matt
Schuh Dieter
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