Modified exponential I(U) dependence and optical efficiency of AlGaAs SCH lasers in computer modeling with Synopsys TCAD

Details Modified exponential I(U) dependence and optical efficiency of AlGaAs SCH lasers in computer modeling with Synopsys TCAD Modified exponential I(U) dependence and optical efficiency of AlGaAs SCH lasers in computer modeling with Synopsys TCAD

2011-07-23

arxiv.org/abs/1107.4668v1

Physics

Condensed Matter

Materials Science

Scientific paper

Optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures are modeled by using Synopsys's Sentaurus TCAD, and open source software. We propose a modified exponential $I-V$ dependence to describe electrical properties. A simple analytical, phenomenological model is found to describe optical efficiency, $\eta$, with a high accuracy, by using two parameters only. A link is shown between differential electrical resistivity $r=dU/dI$ just above the lasing offset voltage, and the functional $\eta(U)$ dependence.

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