Physics – Condensed Matter – Materials Science
Scientific paper
2005-09-05
Physics
Condensed Matter
Materials Science
10 pages, this is an extended version of a paper presented at the first International Conference on Memory Technology and Desi
Scientific paper
10.1016/j.sse.2005.10.002
This work is focused on the understanding of charging and discharging processes in silicon nanocrystal flash memories during program and erase operations through time-dependent numerical simulations. Time dependent simulations of the program and erase operations are based on a description of the nanocrystal memory dynamics in terms of a master equation. The related transition rates are computed with a one dimensional Poisson-Schroedinger solver which allows the computation of the tunnelling currents and of generation and recombination rates between the outer reservoir and localized states in the dielectric layer. Comparison between simulations and experiments available in the literature provides useful insights of the storing mechanisms. In particular, simulations allow us to rule out that electrons are stored in confined states in the conduction band of silicon nanocrystals, whereas they suggest that electrons are actually trapped in localized states in the silicon gap at an energy close to the silicon valence band edge, and located at the interface between the nanocrystals and the surrounding silicon oxide.
Campera Andrea
Iannaccone Giuseppe
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