Modeling of Copper SIMS Profiles in Thin HgCdTe

Details Modeling of Copper SIMS Profiles in Thin HgCdTe Modeling of Copper SIMS Profiles in Thin HgCdTe

Sep 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008jemat..37.1387s&link_type=abstract

Journal of Electronic Materials, Volume 37, Issue 9, pp.1387-1390

Physics

Hgcdte, Secondary-Ion Mass Spectroscopy, Copper In Hgcdte, Mercury Interstitials

Scientific paper

Anomalous secondary-ion mass spectroscopy (SIMS) profiles of copper in thin pieces of HgCdTe are explained using the model used for diode formation by ion milling and ion implantation. In this model, the SIMS ion beam injects mercury interstitials into the HgCdTe as it etches the HgCdTe. The interstitials fill metal vacancies and kick copper off the metal lattice sites. The copper interstitials then diffuse either to the surface being etched, where it is removed and detected by the SIMS instrument, or deeper into the HgCdTe, where it annihilates vacancies. Good agreement between model predictions and experimental SIMS profiles are obtained.

Affiliated with

Also associated with

No associations

Rating

Modeling of Copper SIMS Profiles in Thin HgCdTe does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Modeling of Copper SIMS Profiles in Thin HgCdTe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Modeling of Copper SIMS Profiles in Thin HgCdTe will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1336049