Modeling low energy sputtering of hexagonal boron nitride by xenon ions

Details Modeling low energy sputtering of hexagonal boron nitride by xenon ions Modeling low energy sputtering of hexagonal boron nitride by xenon ions

2008-02-14

arxiv.org/abs/0802.1960v1

Physics

Condensed Matter

Materials Science

19 pages, 8 figures

Scientific paper

10.1063/1.2987090

The sputtering of hexagonal boron nitride due to low energy xenon ion bombardments occurs in various applications including fabrication of cubic boron nitride and erosion of Hall thruster channel walls. At low ion energies, accurate experimental characterization of sputter yields increases in difficulty due to the low yields involved. A molecular dynamics model is employed to simulate the sputtering process and to calculate sputter yields for ion energies ranging from 10 eV to 350 eV. The results are compared to experimental data and a semi-empirical expression developed by Bohdansky is found to adequately describe the simulation data. Surface temperature effects are also investigated, and the sputter yield at 850 K is approximately twice that at 423 K.

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