Mobility in Graphene Double Gate Field Effect Transistors

Details Mobility in Graphene Double Gate Field Effect Transistors Mobility in Graphene Double Gate Field Effect Transistors

2008-09-30

arxiv.org/abs/0809.5099v1

Solid State Electronics, Vol. 52. Issue 4, pp. 514-518, 2008

Physics

Condensed Matter

Materials Science

7 pages, 9 figures

Scientific paper

In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single- and double gated graphene field effect transistors are compared. Even in double-gated graphene FETs, the carrier mobility exceeds the universal mobility of silicon over nearly the entire measured range. At comparable dimensions, reported mobilities for ultra thin body silicon-on-insulator MOSFETs can not compete with graphene FET values.

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