Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices

Details Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices

2008-12-20

arxiv.org/abs/0812.3927v1

IEEE IEDM Technical Digest 21.1, page 509-512 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

The field-effect mobility of graphene devices is discussed. We argue that the graphene ballistic mean free path can only be extracted by taking into account both, the electrical characteristics and the channel length dependent mobility. In doing so we find a ballistic mean free path of 300nm at room-temperature for a carrier concentration of ~1e12/cm2 and that a substantial series resistance of around 300ohmum has to be taken into account. Furthermore, we demonstrate first quantum capacitance measurements on single-layer graphene devices.

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