Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation

Details Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation

2001-05-31

arxiv.org/abs/cond-mat/0105629v1

Physics

Condensed Matter

Strongly Correlated Electrons

2 pages, 1 figure

Scientific paper

10.1209/epl/i2002-00496-6

For five different electron and hole systems in two dimensions (Si MOSFET's, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, $n_c$ that marks the onset of strong localization is shown to be a single power-law function of the scattering rate $1/\tau$ deduced from the maximum mobility. The resulting curve defines the boundary separating a localized phase from a phase that exhibits metallic behavior. The critical density $n_c \to 0$ in the limit of infinite mobility.

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