Physics – Condensed Matter – Materials Science
Scientific paper
2006-09-07
Physics
Condensed Matter
Materials Science
9 pages, 9 figures
Scientific paper
10.1103/PhysRevB.74.245205
A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration due to Mn atoms at random non-crystallographic positions. In the epilayer, Mn incorporated at interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. The expansion coeffcient of interstitial Mn estimated from our data is consistent with theory predictions. The concentration of interstitial Mn and the corresponding lattice expansion of the epilayer are reduced by annealing, accompanied by an increase of the density of randomly distributed Mn atoms in the disordered surface layer. Substitutional Mn atoms remain stable during the low-temperature annealing.
Cukr M.
Holy V.
Jungwirth Tomas
Matej Z.
Novak Vaclav
No associations
LandOfFree
Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-317541