Millisecond spin-flip times of donor-bound electrons in GaAs

Details Millisecond spin-flip times of donor-bound electrons in GaAs Millisecond spin-flip times of donor-bound electrons in GaAs

2006-10-18

arxiv.org/abs/cond-mat/0610524v1

Phys. Rev. B 74, 121304 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.74.121304

We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.

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