Mie-resonances, infrared emission and band gap of InN

Physics – Condensed Matter – Materials Science

Scientific paper

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4 pages, 5 figures, submitted to PRL

Scientific paper

10.1103/PhysRevLett.92.117407

Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than currently accepted 0.7 eV. Micro-cathodoluminescence studies complemented by imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises from In aggregates, and is likely associated with surface states at the metal/InN interfaces.

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