Microwave photovoltage and photoresistance effects in ferromagnetic microstrips

Details Microwave photovoltage and photoresistance effects in ferromagnetic microstrips Microwave photovoltage and photoresistance effects in ferromagnetic microstrips

2007-10-10

arxiv.org/abs/0710.1974v3

Physical Review B 76, 224430 (2007)

Physics

Condensed Matter

Strongly Correlated Electrons

16 pages, 15 figures

Scientific paper

10.1103/PhysRevB.76.224430

We investigate the dc electric response induced by ferromagnetic resonance in ferromagnetic Permalloy (Ni80Fe20) microstrips. The resulting magnetization precession alters the angle of the magnetization with respect to both dc and rf current. Consequently the time averaged anisotropic magnetoresistance (AMR) changes (photoresistance). At the same time the time-dependent AMR oscillation rectifies a part of the rf current and induces a dc voltage (photovoltage). A phenomenological approach to magnetoresistance is used to describe the distinct characteristics of the photoresistance and photovoltage with a consistent formalism, which is found in excellent agreement with experiments performed on in-plane magnetized ferromagnetic microstrips. Application of the microwave photovoltage effect for rf magnetic field sensing is discussed.

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