Microwave intermodulation distortion of MgB2 thin films

Details Microwave intermodulation distortion of MgB2 thin films Microwave intermodulation distortion of MgB2 thin films

2003-05-08

arxiv.org/abs/cond-mat/0305158v2

Physics

Condensed Matter

Superconductivity

13 pages, 3 figures; to be published in Appl. Phys. Lett

Scientific paper

10.1063/1.1584519

The two tone intermodulation arising in MgB2 thin films deposited in-situ by planar magnetron sputtering on sapphire substrates is studied. Samples are characterised using an open-ended dielectric puck resonator operating at 8.8 GHz. The experimental results show that the third order products increase with the two-tone input power with a slope ranging between 1.5 and 2.3. The behaviour can be understood introducing a mechanism of vortex penetration in grain boundaries as the most plausible source of non linearities in these films. This assumption is confirmed by the analysis of the field dependence of the surface resistance, that show a linear behaviour at all temperatures under test.

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