Microwave-Driven Transitions in Two Coupled Semiconductor Charge Qubits

Details Microwave-Driven Transitions in Two Coupled Semiconductor Charge Qubits Microwave-Driven Transitions in Two Coupled Semiconductor Charge Qubits

2009-07-14

arxiv.org/abs/0907.2409v1

Phys. Rev. Lett. 103, 016805 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies either the ground state of one dot or the other. Applying microwave radiation we resonantly drive transitions between states and non-invasively measure occupancy changes using proximal quantum point contact charge detectors. The level structure of the interacting two-qubit system is probed by driving it at a fixed microwave frequency whilst varying the energy detuning of both double dots. We observe additional resonant transitions consistent with a simple coupled two-qubit Hamiltonian model.

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