Microscopic Study of Electronic and Magnetic Properties for Ir Oxide

Details Microscopic Study of Electronic and Magnetic Properties for Ir Oxide Microscopic Study of Electronic and Magnetic Properties for Ir Oxide

2011-06-02

arxiv.org/abs/1106.0413v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures

Scientific paper

The exact diagonalization and the variational cluster approximation (VCA) are used to study the nature of a novel Mott insulator induced by a strong spin-orbit coupling for a two-dimensional three-band Hubbard model consisting of the $t_{2g}$ manifold of $5d$ orbitals. To characterize the ground state, we introduce a local Kramer's doublet which can represent a state with effective angular momentum $J_{\rm eff}=|{\bm S}-{\bm L}|=1/2$ as well as spin $S=1/2$. Our systematic study of the pseudo-spin structure factor defined by the Kramer's doublet shows that the $J_{\rm eff}=1/2$ Mott insulator is smoothly connected to the $S=1/2$ Mott insulator. Using the Kramer's doublet as a variational state for the VCA, we examine the one-particle excitations for the Mott insulating phase. These results are compared with recent experiments on Sr$_2$IrO$_4$.

Affiliated with

Also associated with

No associations

Rating

Microscopic Study of Electronic and Magnetic Properties for Ir Oxide does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Microscopic Study of Electronic and Magnetic Properties for Ir Oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microscopic Study of Electronic and Magnetic Properties for Ir Oxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-495159