Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

Details Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

2009-04-23

arxiv.org/abs/0904.3628v2

Physics

Condensed Matter

Materials Science

10 pages, 4 figures

Scientific paper

We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical TEM technique using energy-filtering transmission electron microscopy and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at top interface by an oxidation-reduction reaction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films.

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