Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells

Details Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells

2007-05-16

arxiv.org/abs/0705.2428v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

21 pages, 6 figures, submitted to Phys. Rev. B

Scientific paper

We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm^2.

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