Microchannel avalanche photodiode with wide linearity range

Details Microchannel avalanche photodiode with wide linearity range Microchannel avalanche photodiode with wide linearity range

2010-01-18

arxiv.org/abs/1001.3050v1

Physics

Instrumentation and Detectors

Submitted to Journal of Technical Physics

Scientific paper

Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10^5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is a directly biased p-n junction under each pixel which plays role of an individual quenching resistor. This allows increasing pixel density up to 40000 per mm^2 and making entire device area sensitive.

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