MgB2 superconductor thin films on Si and Al2O3 substrates

Details MgB2 superconductor thin films on Si and Al2O3 substrates MgB2 superconductor thin films on Si and Al2O3 substrates

2001-05-31

arxiv.org/abs/cond-mat/0105612v2

Physica C 363 (2001) 224-230

Physics

Condensed Matter

Superconductivity

7 pages

Scientific paper

10.1016/S0921-4534(01)01091-7

Thin films of MgB2 superconductor were prepared by three different procedures on sapphire and silicon substrates. Boron thin films, ex-situ annealed in magnesium vapour, resulted in textured polycrystalline films with crystal dimensions below about 1000 nm, onset critical temperature Tcon near 39 K and width of phase transition about 1 K. Both, ex-situ and in-situ annealed co-deposited boron and magnesium thin films on sapphire and silicon substrates give smooth nanocrystalline films. DC properties of nanocrystalline MgB2 films co-deposited on silicon substrate reached Tcon = 33 K and zero resistance Tco = 27 K, the highest values received until now on Si substrates. In addition, microwave analyses prove the existence of superconducting parts of the film below 39 K. This result confirms the possibility to synthesise nanocrystalline superconducting MgB2 thin films on silicon substrate with critical temperature near 39 K, prepared by vacuum co-deposition of boron and magnesium films.

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