Metallic behaviour of carrier-polarized C$_{60}$ molecular layers: Experiment and Theory

Details Metallic behaviour of carrier-polarized C$_{60}$ molecular layers: Experiment and Theory Metallic behaviour of carrier-polarized C$_{60}$ molecular layers: Experiment and Theory

2004-11-02

arxiv.org/abs/cond-mat/0411067v1

Phys. Rev. B vol. 72, 155440 (2005)

Physics

Condensed Matter

Materials Science

4 PRL style pages, 2 figures. email: chandre.dharma-wardana@nrc.ca

Scientific paper

10.1103/PhysRevB.72.155440

Although C$_{60}$ is a molecular crystal with a bandgap E$_g$ of ~2.5 eV, we show that E$_g$ is strongly affected by injected charge. In sharp contrast to the Coulomb blockade typical of quantum dots, E$_g$ is {\it reduced} by the Coulomb effects. The conductance of a thin C$_{60}$ layer sandwiched between metal (Al, Ag, Au, Mg and Pt) contacts is investigated. Excellent Ohmic conductance is observed for Al electrodes protected with ultra-thin LiF layers. First-principles calculations, Hubbard models etc., show that the energy gap of C$_{60}$ is dramatically reduced when electrons hop from C$_{60}^-$ to C$_{60}$.

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