Metallic atomic wires on a patterned dihydrogeneted Si(001)

Details Metallic atomic wires on a patterned dihydrogeneted Si(001) Metallic atomic wires on a patterned dihydrogeneted Si(001)

2005-04-04

arxiv.org/abs/cond-mat/0504060v1

Physics

Condensed Matter

Materials Science

Six pages including 10 figues (To appear in PRB, 2005)

Scientific paper

10.1103/PhysRevB.71.165429

Electronic structure calculations for atomic wire of metals like Al, Ga and In are performed for a patterned dihydrogeneted Si(001):1 $\times$ 1 in search of structures with metallic behavior. The dihydrogeneted Si(001) is patterned by depassivating hygrozen atoms only from one row of Si atoms along the [1$\bar{1}$0] direction. Various structures of adsorbed metals and their electronic properties are examined. It is found that Al and Ga atomic wire structures with metallic property are strongly unstable towards the formation of buckled metal dimers leading to semiconducting behavior. Indium atomic wire, however, displays only marginal preference towards the formation of symmetric dimers staying close to the metallic limit. The reasons behind the lack of metallic atomic wires are explored. In addition, a direction is proposed for the realization of metallic wires on the dihydrogeneted Si(001).

Affiliated with

Also associated with

No associations

Rating

Metallic atomic wires on a patterned dihydrogeneted Si(001) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Metallic atomic wires on a patterned dihydrogeneted Si(001), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metallic atomic wires on a patterned dihydrogeneted Si(001) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-279143