Metal to semiconductor transition in lightly Al doped ZnO thin films grown by sequential pulsed laser deposition

Details Metal to semiconductor transition in lightly Al doped ZnO thin films grown by sequential pulsed laser deposition Metal to semiconductor transition in lightly Al doped ZnO thin films grown by sequential pulsed laser deposition

2012-02-15

arxiv.org/abs/1202.3298v1

Physics

Condensed Matter

Materials Science

3 figures, 16 pages

Scientific paper

Metal to semiconductor transition (MST) was observed in the temperature dependent resitivity measurements in lightly Al doped ZnO (AZO) thin films with different Al concentration in the range from 0 to ~ 0.5 % grown by sequential pulsed laser deposition. MST transition temperature in the AZO films was found to decrease with increasing Al concentration. The ~ 0.5 % doped AZO film showed metallic behavior at all the temperature range without any MST. The MST and the associated variation of MST transition temperature with Al concentration was explained on the basis of competition between carrier activation behavior and various scattering mechanisms.

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