Metal-nanoparticle single-electron transistors fabricated using electromigration

Details Metal-nanoparticle single-electron transistors fabricated using electromigration Metal-nanoparticle single-electron transistors fabricated using electromigration

2003-10-24

arxiv.org/abs/cond-mat/0310594v1

K.I. Bolotin et al, APL 84, 3154 (2004)

Physics

Condensed Matter

3 pages, 3 figures, submitted to APL

Scientific paper

10.1063/1.1695203

We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten charge states of individual gold nanoparticles (5-15 nm in diameter). The devices are sufficiently stable to permit spectroscopic studies of the electron-in-a-box level spectra within the nanoparticle as its charge state is varied.

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