Metal-insulator transition in the In/Si(111) surface

Details Metal-insulator transition in the In/Si(111) surface Metal-insulator transition in the In/Si(111) surface

2005-12-23

arxiv.org/abs/cond-mat/0512613v1

Physics

Condensed Matter

Materials Science

Presented in the 23 European Conference in Surface Science, Berlin, September 2005. Submitted to Surface Science (proceedings

Scientific paper

10.1016/j.susc.2006.01.092

The metal-insulator transition observed in the In/Si(111)-4x1 reconstruction is studied by means of ab initio calculations of a simplified model of the surface. Different surface bands are identified and classified according to their origin and their response to several structural distortions. We support the, recently proposed [New J. of Phys. 7 (2005) 100], combination of a shear and a Peierls distortions as the origin of the metal-insulator transition. Our results also seem to favor an electronic driving force for the transition.

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