Metal-Insulator Transition in Homogeneously Doped Germanium

Details Metal-Insulator Transition in Homogeneously Doped Germanium Metal-Insulator Transition in Homogeneously Doped Germanium

2000-08-08

arxiv.org/abs/cond-mat/0008138v1

In "Phase Transitions and Self-Organization in Electronic and Molecular Materials", edited by J. C. Phillips and M. F. Thorpe

Physics

Condensed Matter

Disordered Systems and Neural Networks

LaTeX2e, 21 pages with 15 embedded figures, to be published in M. F. Thorpe and J. C. Phillips (eds.), "Phase Transitions and

Scientific paper

We have measured the electrical conductivity of Ge:Ga samples prepared by neutron-transmutation doping of isotopically enriched 70Ge single crystals in order to study the metal-insulator transition (MIT) ruling out an ambiguity due to inhomogeneous distribution of impurities. The critical exponent for the zero-temperature conductivity is 0.5 in zero magnetic field and 1.1 in magnetic fields. Variable-range-hopping conduction of the insulating samples and finite-temperature scaling analysis of the MIT induced by the external magnetic field are also discussed.

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