Metal-Insulator Transition in a Low-Mobility Two-Dimensional Electron System

Details Metal-Insulator Transition in a Low-Mobility Two-Dimensional Electron System Metal-Insulator Transition in a Low-Mobility Two-Dimensional Electron System

1997-08-21

arxiv.org/abs/cond-mat/9708166v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, LaTeX, physica.sty (slightly modified prabib.sty), Submitted to the 1997 Conference on Electronic Properties of Two-D

Scientific paper

10.1016/S0921-4526(98)00295-6

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator transition (MIT): the single-parameter scaling of conductivity with temperature near a critical electron density. We obtain the scaling function $\beta$, which determines the length (or temperature) dependence of the conductance. $\beta$ is smooth and monotonic, and linear in the logarithm of the conductance near the MIT, in agreement with the scaling theory for interacting systems.

Affiliated with

Also associated with

No associations

Rating

Metal-Insulator Transition in a Low-Mobility Two-Dimensional Electron System does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Metal-Insulator Transition in a Low-Mobility Two-Dimensional Electron System, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal-Insulator Transition in a Low-Mobility Two-Dimensional Electron System will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-5497