Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems

Details Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems

1999-06-29

arxiv.org/abs/cond-mat/9906425v1

Physica E 6, 260 (2000)

Physics

Condensed Matter

Strongly Correlated Electrons

3 pages, RevTeX, 4 eps-figures, conference paper (EP2DS-13)

Scientific paper

10.1016/S1386-9477(99)00139-3

Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of electrons are expected to be polarized completely. Correlation between the spin polarization and minima in the diagonal resistivity observed by rotating the samples for various total strength of the magnetic field is also investigated.

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