Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As

Details Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As

2008-06-16

arxiv.org/abs/0806.2590v1

Physics

Condensed Matter

Materials Science

11 pages, 3 figures,submitted to APL

Scientific paper

MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become comparable. Below metal-insulator transition we found giant anisotropic magnetoresistance (GAMR), which depends on orientation of magnetization to crystallographic axes and manifests itself in positive magnetoresistance near 50% for Rxx at T=1.7K, H//[110] crystallographic direction and parallel to current in contrast to smaller and negative magnetoresistance for H// direction. We connect GAMR with anisotropic spin-orbit interaction resulting in formation of high- and low- resistance states with different localization along non-equivalent easy axes.

Affiliated with

Also associated with

No associations

Rating

Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-92084