Metal induced gap states on Pt-modified Ge(001) surfaces

Details Metal induced gap states on Pt-modified Ge(001) surfaces Metal induced gap states on Pt-modified Ge(001) surfaces

Dec 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007njph....9..449o&link_type=abstract

New Journal of Physics, Volume 9, Issue 12, pp. 449 (2007).

Physics

1

Scientific paper

Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) we have studied the electronic properties of a novel, planar, metal semiconductor contact. For this purpose we take advantage of the unique properties of the Pt-modified Ge(001) surface, which consist of coexisting metallic and semiconducting terraces. Spatially resolved STS measurements reveal that the higher lying metallic terraces induce electronic states in the band gap region of the lower lying semiconducting terraces.

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