Metal-induced gap states in epitaxial organic-insulator/metal interfaces

Details Metal-induced gap states in epitaxial organic-insulator/metal interfaces Metal-induced gap states in epitaxial organic-insulator/metal interfaces

2004-08-31

arxiv.org/abs/cond-mat/0408677v1

Physics

Condensed Matter

Materials Science

4 pages, 5 figures

Scientific paper

10.1103/PhysRevB.72.075446

We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a pre-peak indicative of MIGS. An {\it ab initio} electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism (spin-polarized organic crystal at the interface) is predicted to be possible with a carrier doping.

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