Memristive switching of MgO based magnetic tunnel junctions

Details Memristive switching of MgO based magnetic tunnel junctions Memristive switching of MgO based magnetic tunnel junctions

2009-07-21

arxiv.org/abs/0907.3684v1

Physics

Condensed Matter

Materials Science

Scientific paper

Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each magnetic state, multiple resistive sates are created depending on the bias history which provides a method for multi-bit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO barriers are compared to gain insight into the switching mechanism.

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