Memory Effects in the Charge Response of Lightly Doped La_{2-x}Sr_{x}CuO_{4}

Details Memory Effects in the Charge Response of Lightly Doped La_{2-x}Sr_{x}CuO_{4} Memory Effects in the Charge Response of Lightly Doped La_{2-x}Sr_{x}CuO_{4}

2011-12-29

arxiv.org/abs/1201.0033v1

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 4 figures, conference on Quantum Phenomena in Complex Matter 2011 -- STRIPES 11; to appear in J. Supercond. Nov. Magn

Scientific paper

The in-plane magnetoresistance (MR) of a single crystal La_{1.97}Sr_{0.03}CuO_{4} has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive and exhibits several glassy features, such as history dependence, memory and hysteresis. These observations are qualitatively similar to the previously reported behavior of the out-of-plane resistance. The results suggest that the memory effects in the MR are related to the onset of glassiness in the dynamics of doped holes.

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