Memory effect under pressure in low density amorphous silicon

Details Memory effect under pressure in low density amorphous silicon Memory effect under pressure in low density amorphous silicon

2010-07-22

arxiv.org/abs/1007.3813v1

Physics

Condensed Matter

Materials Science

Scientific paper

Our investigations on porous Si show that on increase of pressure it undergoes crystalline phase transitions instead of pressure induced amorphization - claimed earlier, and the amorphous phase appears only on release of pressure. This amorphous phase, when subjected to higher pressures, transforms reversibly to a higher coordinated primitive hexagonal phase showing a kind of memory effect which may be the only example of its kind in the elemental solids. First principles calculations and thermodynamic arguments help understand these observations.

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