Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix

Details Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix Memory effect of Mn$_5$Ge$_3$ nanomagnets embedded inside a Mn-diluted Ge matrix

2009-10-21

arxiv.org/abs/0910.4095v1

Appl. Phys. Lett. 95, 192505 (2009)

Physics

Condensed Matter

Materials Science

10 pages, 4 figures,. submitted to Appl. Phys. Lett

Scientific paper

10.1063/1.3264076

Crystalline Mn5Ge3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn5Ge3. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn5Ge3 nanomagnets, rather than by the inter-particle interaction through the Mn-diluted Ge matrix.

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