Memory Effect in Silicon Nitride in Silicon Devices

Physics – Condensed Matter

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4 pages, LaTex

Scientific paper

The dominant dielectric used currently in silicon devices is silicon oxide. Its application for future devices will be impeded by several fundamental limitations which lead to low reliability of semiconductor devices and to the necessity of alternative dielectrics. Amorphous silicon nitride and oxynitride are considered now as alternative to silicon oxide in future devices. One of the unique property of amorphous silicon nitride is the electron and hole capture by the deep traps with extremely long life time (10 years) in the captured state (the memory effect). This property is employed in memory devices and microprocessors in computers. Despite numerous efforts the nature of traps responsible for the memory effect in this material is so far unclear. In this paper we discuss the nature of such traps using the quantum-chemical simulation. The calculations show that the defects responsible for the electron and hole capture in amorphous silicon nitride can be the Si-Si defects created by excess silicon atoms.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Memory Effect in Silicon Nitride in Silicon Devices does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Memory Effect in Silicon Nitride in Silicon Devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory Effect in Silicon Nitride in Silicon Devices will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-61040

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.