Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)

Details Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100) Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)

2011-02-03

arxiv.org/abs/1102.0675v1

Appl. Phys. Lett. 98, 113103 (2011)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.3565968

Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of isotope labeling it is possible to tag graphene generated from reacted ethylene. Furthermore, we are able to analyze graphene supported by oxidized Si(100) substrates, allowing the study of graphene films grown by chemical vapor deposition on metal and transfered to silicon. This introduces a powerful method to explore the fundamentals of graphene formation.

Affiliated with

Also associated with

No associations

Rating

Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-427788