Mechanisms of enhanced orbital dia- and paramagnetism: Application to the Rashba semiconductor BiTeI

Details Mechanisms of enhanced orbital dia- and paramagnetism: Application to the Rashba semiconductor BiTeI Mechanisms of enhanced orbital dia- and paramagnetism: Application to the Rashba semiconductor BiTeI

2011-11-24

arxiv.org/abs/1111.5800v1

Physics

Condensed Matter

Materials Science

7 pages, including 4 figures and supplement; submitted to PRL

Scientific paper

We study the magnetic susceptibility of a layered semiconductor BiTeI with giant Rashba spin splitting both theoretically and experimentally to explore its orbital magnetism. Apart from the core contributions, a large temperature-dependent diamagnetic susceptibility is observed when the Fermi energy E_F is near the crossing point of the conduction bands, while the susceptibility turns to be paramagnetic when E_F is away from it. These features are consistent with first-principles calculations, which also predict an enhanced orbital magnetic susceptibility with both positive and negative signs as a function of E_F due to band (anti)crossings. Based on these observations, we propose two mechanisms for an enhanced paramagnetic orbital susceptibility.

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