Mechanism for current saturation and energy dissipation in graphene transistors

Details Mechanism for current saturation and energy dissipation in graphene transistors Mechanism for current saturation and energy dissipation in graphene transistors

2010-05-08

arxiv.org/abs/1005.1351v1

Phys. Rev. Lett. 104, 236601 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

revtex, 5 pages, 3 figures, to appear in Phys. Rev. Lett.

Scientific paper

10.1103/PhysRevLett.104.236601

From a combination of careful and detailed theoretical and experimental studies, we demonstrate that the Boltzmann theory including all scattering mechanisms gives an excellent account, with no adjustable parameters, of high electric field transport in single as well as double-oxide graphene transistors. We further show unambiguously that scattering from the substrate and superstrate surface optical (SO) phonons governs the high field transport and heat dissipation over a wide range of experimentally relevant parameters. Models that neglect SO phonons altogether or treat them in a simple phenomenological manner are inadequate. We outline possible strategies for achieving higher current and complete saturation in graphene devices.

Affiliated with

Also associated with

No associations

Rating

Mechanism for current saturation and energy dissipation in graphene transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Mechanism for current saturation and energy dissipation in graphene transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mechanism for current saturation and energy dissipation in graphene transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-611809