Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing

Details Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing

2009-08-21

arxiv.org/abs/0908.3181v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high temperatures, where the a-Si:H resistance is not too large, the charge detection measurement agrees with a direct measurement of current. The device geometry allows us to probe both the field effect and dispersive transport in the a-Si:H using charge sensing and to extract the density of states near the Fermi energy.

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