Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures

Details Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures

2004-12-10

arxiv.org/abs/cond-mat/0412260v1

Phys. Rev. Lett. 94, 016405 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to be published in Physical Review Letters

Scientific paper

10.1103/PhysRevLett.94.016405

We determine the density-dependent electron mass, m*, in two-dimensional (2D) electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov deHaas measurements. Using very high quality transistors with tunable electron densities we measure m* in single, high mobility specimens over a wide range of r_s (6 to 0.8). Toward low-densities we observe a rapid increase of m* by as much as 40%. For 2>r_s>0.8 the mass values fall ~10% below the band mass of GaAs. Numerical calculations are in qualitative agreement with our data but differ considerably in detail.

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