Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene

Details Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene

2007-12-02

arxiv.org/abs/0712.0119v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2837539

Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70-120 fs range is followed by a slower relaxation process in the 0.4-1.7 ps range. The slower relaxation time is found to be inversely proportional to the degree of crystalline disorder in the graphene layers as measured by Raman spectroscopy. We relate the measured fast and slow time constants to carrier-carrier and carrier-phonon intraband and interband scattering processes in graphene.

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